Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e1
- Typical Rise Time Ns
- 42
- Case Connection
- DRAIN
- Channel Mode
- Enhancement
- Configuration
- Single
- Montaj Tipi
- Through Hole
- Seri
- PolarHT™ HiPerFET™
- Gate To Source Voltage Vgs
- 20V
- Typical Gate Charge10v Nc
- 150
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number Of Elements Per Chip
- 1
- Svhc
- Yes
- Minimum Operating Temperature C
- -55
- Turn Off Delay Time
- 85 ns
- Process Technology
- HiperFET
- Transistor Element Material
- SILICON
- Maximum Drain Source Voltage V
- 150
- Drainsource On Resistancemax
- 0.016Ohm
- Kılıf / Paket
- TO-247-3
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Lead Shape
- Through Hole
- Channel Type
- N
- Reach Svhc
- No SVHC
- Eccn Us
- EAR99
- Fall Time Typ
- 26 ns
- Number Of Elements
- 1
- Genişlik
- 5.3mm
- Pcb Changed
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Automotive
- No
- Continuous Drain Current Id
- 120A
- Package Height
- 21.45(Max)
- Rise Time
- 42ns
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Fet Type
- N-Channel
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors