IXFB44N100P

Specifications

Power Dissipation

1.25kW

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Power Dissipation Max

1250W Tc

Current Continuous Drain Id25

44A Tc

Rds On Max Id Vgs

220m Ω @ 22A, 10V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

56 ns

Gate Charge Qg Max Vgs

305nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

19000pF @ 25V

Continuous Drain Current Id

44A

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Rise Time

68ns

Ambalaj

Tube

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Drain To Source Breakdown Voltage

1kV

Fet Type

N-Channel

Transistor Application

SWITCHING

Turn Off Delay Time

90 ns

Avalanche Energy Rating Eas

2000 mJ

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.22Ohm

Kılıf / Paket

TO-264-3, TO-264AA

Montaj

Through Hole

Yayın Yılı

2008

Pin Sayısı

3

Drain To Source Voltage Vdss

1000V

Qualification Status

Not Qualified

Vgsth Max Id

6.5V @ 1mA

Fabrika Tedarik Süresi

26 Weeks

Element Configuration

Single

JESD-609 Kodu

e1

Case Connection

DRAIN