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Support
Technical team support
Specifications
- JESD-609 Kodu
- e1
- Typical Rise Time Ns
- 60
- Case Connection
- DRAIN
- Channel Mode
- Enhancement
- Configuration
- Single
- Montaj Tipi
- Through Hole
- Seri
- HiPerFET™, PolarP2™
- Gate To Source Voltage Vgs
- 30V
- Typical Gate Charge10v Nc
- 310
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number Of Elements Per Chip
- 1
- Turn Off Delay Time
- 95 ns
- Minimum Operating Temperature C
- -55
- Process Technology
- HiperFET
- Transistor Element Material
- SILICON
- Maximum Drain Source Voltage V
- 1200
- Kılıf / Paket
- TO-264-3, TO-264AA
- Qualification Status
- Not Qualified
- Channel Type
- N
- Number Of Elements
- 1
- Fall Time Typ
- 56 ns
- Pcb Changed
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 310nC @ 10V
- Automotive
- No
- Continuous Drain Current Id
- 30A
- Package Height
- 26.59(Max)
- Rise Time
- 60ns
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Fet Type
- N-Channel
- Package Length
- 20.29(Max)
- Supplier Package
- PLUS 264
- Maximum Operating Temperature C
- 150
- Power Dissipation
- 1.25kW
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- AVALANCHE RATED
- Maximum Gate Source Voltage V
- ±30
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