IXFA6N120P

Specifications

Maximum Gate Source Voltage V

±30

Current Continuous Drain Id25

6A Tc

Rds On Max Id Vgs

2.4 Ω @ 500mA, 10V

Supplier Package

D2PAK

Maximum Operating Temperature C

150

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Standard Package Name

TO-263

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Category

Power MOSFET

Fet Type

N-Channel

Package Length

10.41(Max)

Channel Type

N

Eccn Us

EAR99

Number Of Elements

1

Pcb Changed

2

Automotive

No

Gate Charge Qg Max Vgs

92nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

6A

Package Height

4.83(Max)

HTS Kodu

8541.90.00.00

Terminal Sayısı

2

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Lead Shape

Gull-wing

Minimum Operating Temperature C

-55

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

1200

Drainsource On Resistancemax

0.0024Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

HiPerFET™, PolarP2™

Typical Gate Charge10v Nc

92

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements Per Chip

1

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

1200V

Typical Rise Time Ns

11

Case Connection

DRAIN