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C3 ChipZentronix
IXFA10N80P

IXYS

IXFA10N80P

Single MOSFETs Transistors

RoHS: Compliant

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RoHS

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Specifications

Supplier Package
D2PAK
JESD-609 Kodu
e3
Hts
8541.29.00.95
Çalışma Sıcaklığı
-55°C~150°C TJ
Package Length
10.41(Max)
Maximum Drain Source Voltage V
800
Typical Fall Time Ns
22
Turn Off Delay Time
62 ns
Pin Sayısı
3
Channel Mode
Enhancement
Kurşunsuz
Lead Free
Vgs Max
±30V
Configuration
Single
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Operating Mode
ENHANCEMENT MODE
Seri
HiPerFET™, PolarHT™
Typical Input Capacitance Vds Pf
2050@25V
RoHS Durumu
ROHS3 Compliant
Current Continuous Drain Id25
10A Tc
Eccn Us
EAR99
Drive Voltage Max Rds On Min Rds On
10V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fall Time Typ
22 ns
Case Connection
DRAIN
Typical Turnoff Delay Time Ns
62
Standard Package Name
TO-263
Number Of Elements
1
Maximum Continuous Drain Current A
10
Process Technology
HiperFET
Maximum Gate Source Voltage V
±30
Channel Type
N
Automotive
No
Fet Type
N-Channel
Lead Shape
Gull-wing
Category
Power MOSFET
Number Of Elements Per Chip
1
Threshold Voltage
5.5V
Avalanche Energy Rating Eas
600 mJ
Package Width
9.4(Max)
Qualification Status
Not Qualified

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