IGT60R190D1S

Specifications

Material

GaN

Maximum Drain Source Voltage V

600

Maximum Operating Temperature C

150

Pin Sayısı

9

Supplier Package

HSOF

Tab

Tab

Package Height

2.3

Minimum Operating Temperature C

-55

RoHS Durumu

Yes with exemptions

Package Description

,

Part Life Cycle Code

Active

Moisture Sensitivity Levels

3

Maximum Gate Source Voltage V

-10(Min)

Package Length

9.9

Channel Type

N

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Ambalaj

Tape and Reel

Pcb Changed

8

Maximum Continuous Drain Current Ma

12500

Parça Durumu

Active

Military

No

Mounting

Surface Mount

Risk Rank

2.28

Eccn Us

EAR99

Configuration

Single Hex Source

Package Width

10.38

Maximum Power Dissipation Mw

55500

Üretici Parça No

IGT60R190D1S

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Samacsys Description

Trans JFET N-CH 600V 12.5A GaN 9-Pin(8+Tab) HSOF T/R