Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Terminal Pozisyonu
- SINGLE
- Terminal Sayısı
- 3
- Power Dissipation
- 35W
- Turn On Delay Time
- 12 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-247-3
- Akım Değeri
- 20.7A
- Rise Time
- 15ns
- Vgs Max
- ±20V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Fall Time Typ
- 6.4 ns
- Turn Off Delay Time
- 59 ns
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Avalanche Energy Rating Eas
- 690 mJ
- Montaj
- Through Hole
- Seri
- CoolMOS™
- Gate Charge Qg Max Vgs
- 124nC @ 10V
- Radyasyon Dayanımı
- No
- Continuous Drain Current Id
- 20.7A
- Voltage Rated Dc
- 650V
- Rds On Max Id Vgs
- 220m Ω @ 13.1A, 10V
- Vgsth Max Id
- 5V @ 1mA
- Max Dual Supply Voltage
- 600V
- Input Capacitance Ciss Max Vds
- 2400pF @ 25V
- Power Dissipation Max
- 208W Tc
- Pulsed Drain Currentmax Idm
- 52A
- Operating Mode
- ENHANCEMENT MODE
- Terminal Kaplaması
- Tin (Sn)
- Current Continuous Drain Id25
- 20.7A Tc
- Kurşunsuz
- Lead Free
- Drive Voltage Max Rds On Min Rds On
- 10V
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