SPU04N60C3BKMA1

Specifications

Vgs Max

±20V

Rise Time

2.5ns

Akım Değeri

4.5A

Element Configuration

Single

Threshold Voltage

3V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Number Of Elements

1

Terminal Sayısı

3

Power Dissipation

50W

Turn On Delay Time

6 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material

SILICON

Pin Sayısı

3

Turn Off Delay Time

58.5 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yüzey Montaj

NO

Pin Sayısı

3

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Fet Type

N-Channel

Kurşunsuz Kodu

no

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Fall Time Typ

9.5 ns

Voltage Rated Dc

650V

Rds On Max Id Vgs

950m Ω @ 2.8A, 10V

Vgsth Max Id

3.9V @ 200μA

Input Capacitance Ciss Max Vds

490pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipation Max

50W Tc

Drain To Source Breakdown Voltage

600V

Seri

CoolMOS™

Gate Charge Qg Max Vgs

25nC @ 10V

Continuous Drain Current Id

4.5A

Fabrika Tedarik Süresi

8 Weeks

Additional Feature

AVALANCHE RATED

Ambalaj

Tube

Drainsource On Resistancemax

0.95Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)