Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Fall Time Typ
- 30 ns
- Rise Time
- 18ns
- JESD-609 Kodu
- e3
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Through Hole
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 23m Ω @ 64A, 10V
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current Id
- 80A
- Turn Off Delay Time
- 56 ns
- Vgs Max
- ±20V
- Vgsth Max Id
- 4V @ 5.5mA
- Terminal Pozisyonu
- SINGLE
- Additional Feature
- AVALANCHE RATED
- Seri
- SIPMOS®
- Radyasyon Dayanımı
- No
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kılıf / Paket
- TO-220-3
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Max Dual Supply Voltage
- -60V
- Power Dissipation Max
- 340W Tc
- Current Continuous Drain Id25
- 80A Tc
- Jedec95 Code
- TO-220AB
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Halogen Free
- Halogen Free
- Parça Durumu
- Active
- Yayın Yılı
- 1999
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 173nC @ 10V
- Fet Type
- P-Channel
- Power Dissipation
- 340W
- Drain To Source Voltage Vdss
- 60V
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