SPP80N03S2L-06

Specifications

Avalanche Energy Rating Eas

240 mJ

Fall Time Typ

61 ns

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

6.2m Ω @ 80A, 10V

Montaj Tipi

Through Hole

Rise Time

23ns

Continuous Drain Current Id

80A

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pulsed Drain Currentmax Idm

320A

REACH Uyumluluk Kodu

unknown

Drainsource On Resistancemax

0.0095Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Fet Type

N-Channel

Gate Charge Qg Max Vgs

68nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Voltage Rated Dc

30V

Ambalaj

Tube

Number Of Elements

1

Input Capacitance Ciss Max Vds

2530pF @ 25V

Montaj

Through Hole

Kurşunsuz

Contains Lead

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e0

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Vgsth Max Id

2V @ 80μA

Turn Off Delay Time

73 ns

Akım Değeri

80A

Seri

OptiMOS™

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Kılıf / Paket

TO-220-3

RoHS Durumu

RoHS Compliant

Terminal Sayısı

3

Power Dissipation Max

150W Tc

Qualification Status

Not Qualified