SPP20N65C3XKSA1

Specifications

Max Dual Supply Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

114nC @ 10V

Voltage Rated Dc

650V

Ambalaj

Tube

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Input Capacitance Ciss Max Vds

2400pF @ 25V

Montaj

Through Hole

Avalanche Energy Rating Eas

690 mJ

Fall Time Typ

4.5 ns

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

190m Ω @ 13.1A, 10V

Montaj Tipi

Through Hole

Rise Time

5ns

Continuous Drain Current Id

20.7A

Vgs Max

±20V

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

208W Tc

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Pin Sayısı

3

Current Continuous Drain Id25

20.7A Tc

Yayın Yılı

2005

Terminal Kaplaması

Matte Tin (Sn)

Halogen Free

Halogen Free

Power Dissipation

208W

Pin Sayısı

3

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE