Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Obsolete
- Yayın Yılı
- 2003
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Input Capacitance Ciss Max Vds
- 7020pF @ 25V
- Jesd30 Code
- R-PSFM-T3
- Ambalaj
- Tube
- Number Of Elements
- 1
- Voltage Rated Dc
- 30V
- Terminal Sayısı
- 3
- RoHS Durumu
- Non-RoHS Compliant
- Pin Sayısı
- 3
- Jedec95 Code
- TO-220AB
- Current Continuous Drain Id25
- 100A Tc
- Drainsource On Resistancemax
- 0.0033Ohm
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Power Dissipation Max
- 300W Tc
- Additional Feature
- AVALANCHE RATED
- Seri
- OptiMOS™
- Vgs Max
- ±20V
- Akım Değeri
- 100A
- Terminal Pozisyonu
- SINGLE
- Vgsth Max Id
- 4V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kılıf / Paket
- TO-220-3
- Pulsed Drain Currentmax Idm
- 400A
- JESD-609 Kodu
- e0
- Rise Time
- 40ns
- Rds On Max Id Vgs
- 3.3m Ω @ 80A, 10V
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz
- Contains Lead
- Avalanche Energy Rating Eas
- 810 mJ
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