
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pulsed Drain Currentmax Idm
- 3A
- Number Of Elements
- 1
- Rise Time
- 3ns
- Yayın Yılı
- 2004
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation Max
- 1.8W Ta
- Drive Voltage Max Rds On Min Rds On
- 10V
- Seri
- CoolMOS™
- Gate Charge Qg Max Vgs
- 17nC @ 10V
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-261-4, TO-261AA
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation
- 1.8W
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Drain To Source Breakdown Voltage
- 650V
- Kurşunsuz
- Contains Lead
- Case Connection
- DRAIN
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Fet Type
- N-Channel
- Terminal Pozisyonu
- DUAL
- Montaj
- Surface Mount
- Qualification Status
- Not Qualified
- Parça Durumu
- Obsolete
- Current Continuous Drain Id25
- 700mA Ta
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 1.4 Ω @ 2A, 10V
- Fall Time Typ
- 3 ns
- Vgsth Max Id
- 3.9V @ 135μA
- Input Capacitance Ciss Max Vds
- 400pF @ 25V
- Pin Sayısı
- 4
- Akım Değeri
- 700mA
- JESD-609 Kodu
- e0
- Operating Mode
- ENHANCEMENT MODE
- Voltage Rated Dc
- 650V
- Nominal Vgs
- 3 V
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors

