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SPD07N20GBTMA1

Infineon Technologies

SPD07N20GBTMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Gate To Source Voltage Vgs
20V
Parça Durumu
Obsolete
Vgsth Max Id
4V @ 1mA
Pin Sayısı
4
RoHS Durumu
RoHS Compliant
Power Dissipation
40W
Additional Feature
AVALANCHE RATED
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Power Dissipation Max
40W Tc
Vgs Max
±20V
Tepe Reflow Süresi (maks. sn)
40
Çalışma Sıcaklığı
-55°C~175°C TJ
Radyasyon Dayanımı
No
Max Dual Supply Voltage
200V
ECCN Kodu
EAR99
Terminal Kaplaması
Tin (Sn)
Operating Mode
ENHANCEMENT MODE
Yayın Yılı
2005
Pulsed Drain Currentmax Idm
28A
Ambalaj
Tape & Reel (TR)
Kurşunsuz
Contains Lead
Rise Time
40ns
Rds On Max Id Vgs
400m Ω @ 4.5A, 10V
Montaj
Surface Mount
Gate Charge Qg Max Vgs
31.5nC @ 10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn On Delay Time
10 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj Tipi
Surface Mount
Fall Time Typ
30 ns
JESD-609 Kodu
e3
Fet Type
N-Channel
Current Continuous Drain Id25
7A Tc
Input Capacitance Ciss Max Vds
530pF @ 25V
Seri
SIPMOS®
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current Id
7A
Halogen Free
Not Halogen Free
Drainsource On Resistancemax
0.4Ohm

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