SPD04P10PLGBTMA1

Specifications

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Seri

SIPMOS®

Input Capacitance Ciss Max Vds

372pF @ 25V

Fabrika Tedarik Süresi

18 Weeks

Current Continuous Drain Id25

4.2A Tc

Fet Type

P-Channel

Number Of Channels

1

JESD-609 Kodu

e3

Fall Time Typ

5 ns

Turn On Delay Time

4.6 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

57 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

16nC @ 10V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

2

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Breakdown Voltage

-100V

Turn Off Delay Time

18 ns

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Terminal Pozisyonu

SINGLE

Qualification Status

Not Qualified

Case Connection

DRAIN

Number Of Elements

1

Drainsource On Resistancemax

0.85Ohm

Halogen Free

Not Halogen Free

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

-4.2A

Max Dual Supply Voltage

-100V

Threshold Voltage

-1.5V

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Power Dissipation Max

38W Tc

Jedec95 Code

TO-252AA

Transistor Element Material

SILICON