SPD04N60S5

Specifications

Gate Charge Qg Max Vgs

22.9nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Turn On Delay Time

55 ns

Fall Time Typ

15 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

4.5A Tc

Input Capacitance Ciss Max Vds

580pF @ 25V

Seri

CoolMOS™

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

4.5A

Drainsource On Resistancemax

0.95Ohm

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Turn Off Delay Time

60 ns

Drain To Source Breakdown Voltage

600V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Vgsth Max Id

5.5V @ 200μA

Pin Sayısı

3

RoHS Durumu

RoHS Compliant

Power Dissipation

50W

Voltage Rated Dc

600V

Additional Feature

AVALANCHE RATED, HIGH VOLTAGE

Akım Değeri

4.5A

Yüzey Montaj

YES

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Jedec95 Code

TO-252AA

Power Dissipation Max

50W Tc

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Yayın Yılı

2005