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SPD02N80C3ATMA1

Infineon Technologies

SPD02N80C3ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Vgs Max
±20V
Power Dissipation Max
42W Tc
Current Continuous Drain Id25
2A Tc
Fet Type
N-Channel
Input Capacitance
290pF
Fall Time Typ
18 ns
Akım Değeri
2A
Max Dual Supply Voltage
800V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Seri
CoolMOS™
Input Capacitance Ciss Max Vds
290pF @ 100V
Çalışma Sıcaklığı
-55°C~150°C TJ
Fabrika Tedarik Süresi
18 Weeks
Parça Durumu
Active
Maks. Çalışma Sıcaklığı
150°C
Gate To Source Voltage Vgs
20V
Montaj
Surface Mount
Rds On Max
2.7 Ω
Drain To Source Voltage Vdss
800V
Voltage Rated Dc
800V
Turn On Delay Time
25 ns
Montaj Tipi
Surface Mount
Power Dissipation
42W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-55°C
RoHS Durumu
ROHS3 Compliant
Gate Charge Qg Max Vgs
16nC @ 10V
Vgsth Max Id
3.9V @ 120μA
Tedarikçi Cihaz Paketi
PG-TO252-3
Rise Time
15ns
Kurşunsuz
Lead Free
Ambalaj
Tape & Reel (TR)
Turn Off Delay Time
65 ns
Drive Voltage Max Rds On Min Rds On
10V
Rds On Max Id Vgs
2.7Ohm @ 1.2A, 10V
Drain To Source Resistance
2.4Ohm
Continuous Drain Current Id
2A
Pin Sayısı
3
Yayın Yılı
2005

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