SPD02N60C3BTMA1

Specifications

Jedec95 Code

TO-252AA

Fet Type

N-Channel

Current Continuous Drain Id25

1.8A Tc

Power Dissipation Max

25W Tc

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Yüzey Montaj

YES

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Seri

CoolMOS™

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

200pF @ 25V

Parça Durumu

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Additional Feature

AVALANCHE RATED

Drain To Source Voltage Vdss

650V

Gate Charge Qg Max Vgs

12.5nC @ 10V

Vgsth Max Id

3.9V @ 80μA

Avalanche Energy Rating Eas

50 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Pin Sayısı

3

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Kurşunsuz Kodu

no

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

3 Ω @ 1.1A, 10V

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Drainsource On Resistancemax

3Ohm

Number Of Elements

1

REACH Uyumluluk Kodu

not_compliant

Pulsed Drain Currentmax Idm

5.4A

Drain Currentmax Abs Id

1.8A