SPB80P06PGATMA1

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Power Dissipation

340W

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

-80A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

173nC @ 10V

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

5033pF @ 25V

Terminal Pozisyonu

SINGLE

Current Continuous Drain Id25

80A Tc

Rise Time

18ns

Akım Değeri

-80A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Turn On Delay Time

24 ns

Fall Time Typ

30 ns

Voltage Rated Dc

-60V

Halogen Free

Halogen Free

Qualification Status

Not Qualified

Seri

SIPMOS®

Vgsth Max Id

4V @ 5.5mA

Pin Sayısı

3

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

13 Weeks

Drain To Source Voltage Vdss

60V

Number Of Channels

1

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Breakdown Voltage

-60V

Fet Type

P-Channel

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

4