SPB80N06S2L-11

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Number Of Elements

1

Seri

OptiMOS™

Vgsth Max Id

2V @ 93μA

Terminal Formu

GULL WING

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

unknown

Parça Durumu

Obsolete

Vgs Max

±20V

Pin Sayısı

4

Drainsource On Resistancemax

0.0147Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

320A

Gate Charge Qg Max Vgs

80nC @ 10V

Avalanche Energy Rating Eas

280 mJ

Fet Type

N-Channel

RoHS Durumu

Non-RoHS Compliant

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

80A

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Rds On Max Id Vgs

11m Ω @ 40A, 10V

Input Capacitance Ciss Max Vds

2650pF @ 25V

Current Continuous Drain Id25

80A Tc

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode

ENHANCEMENT MODE

Akım Değeri

80A

ECCN Kodu

EAR99

Yayın Yılı

2004

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Power Dissipation Max

158W Tc

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Montaj

Surface Mount