SPB20N60S5ATMA1

Specifications

Vgsth Max Id

5.5V @ 1mA

Ds Breakdown Voltagemin

600V

Seri

CoolMOS™

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Drain To Source Voltage Vdss

600V

Avalanche Energy Rating Eas

690 mJ

Fet Type

N-Channel

Jesd30 Code

R-PSSO-G2

RoHS Durumu

RoHS Compliant

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drainsource On Resistancemax

0.19Ohm

Pin Sayısı

4

Vgs Max

±20V

Parça Durumu

Obsolete

Pulsed Drain Currentmax Idm

40A

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

103nC @ 10V

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

no

Power Dissipation Max

208W Tc

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

3000pF @ 25V

Rds On Max Id Vgs

190m Ω @ 13A, 10V

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Additional Feature

AVALANCHE RATED

Current Continuous Drain Id25

20A Tc

Transistor Element Material

SILICON

Yayın Yılı

2004

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Drain Currentmax Abs Id

20A