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SPB18P06PGATMA1

Infineon Technologies

SPB18P06PGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.86
  • 10+ pcs$0.81
  • 100+ pcs$0.76
  • 500+ pcs$0.72

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RoHS

Compliant

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Specifications

Vgsth Max Id
4V @ 1mA
Seri
SIPMOS®
Pin Sayısı
3
JESD-609 Kodu
e3
Terminal Formu
GULL WING
Fabrika Tedarik Süresi
13 Weeks
Number Of Channels
1
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Drain To Source Breakdown Voltage
-60V
Drain To Source Voltage Vdss
60V
Fet Type
P-Channel
RoHS Durumu
ROHS3 Compliant
REACH Uyumluluk Kodu
not_compliant
Uzunluk
10mm
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Pin Sayısı
4
Vgs Max
±20V
Parça Durumu
Active
Element Configuration
Single
Kurşunsuz Kodu
no
Power Dissipation Max
81.1W Ta
Yükseklik
4.5mm
Terminal Sayısı
2
Rds On Max Id Vgs
130m Ω @ 13.2A, 10V
Additional Feature
AVALANCHE RATED
Max Junction Temperature Tj
175°C
Yayın Yılı
2006
Terminal Kaplaması
Tin (Sn)
Threshold Voltage
-3V
Turn Off Delay Time
25 ns
Kurşunsuz
Lead Free
Montaj
Surface Mount
Çalışma Sıcaklığı
-55°C~175°C TJ
Case Connection
DRAIN
Power Dissipation
81.1W
Jesd30 Code
R-PSSO-G2
Continuous Drain Current Id
-18.7A
Drive Voltage Max Rds On Min Rds On
10V
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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