Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- AVALANCHE RATED
- Rds On Max Id Vgs
- 190m Ω @ 13.1A, 10V
- Terminal Sayısı
- 3
- Yayın Yılı
- 2005
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 34.5W Tc
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 67 ns
- Montaj
- Through Hole
- Max Dual Supply Voltage
- 600V
- Kurşunsuz
- Lead Free
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 16 Weeks
- Pin Sayısı
- 3
- Vgsth Max Id
- 3.9V @ 1mA
- Seri
- CoolMOS™
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Parça Durumu
- Not For New Designs
- Configuration
- SINGLE WITH BUILT-IN DIODE
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Rise Time
- 5ns
- Current Continuous Drain Id25
- 20.7A Tc
- Jedec95 Code
- TO-220AB
- Terminal Pozisyonu
- SINGLE
- Input Capacitance Ciss Max Vds
- 2400pF @ 25V
- Turn On Delay Time
- 10 ns
- Transistor Element Material
- SILICON
- Akım Değeri
- 20.7A
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Voltage Rated Dc
- 650V
- Fall Time Typ
- 4.5 ns
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