SPA11N80C3XKSA2

Specifications

Vgsth Max Id

3.9V @ 680μA

Pulsed Drain Currentmax Idm

33A

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Isolated Tab

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

800V

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1600pF @ 100V

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

800V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Power Dissipation Max

34W Tc

Number Of Elements

1

Current Continuous Drain Id25

11A Tc

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

85nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Rds On Max Id Vgs

450m Ω @ 7.1A, 10V

Jedec95 Code

TO-220AB

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Yayın Yılı

2005

Drainsource On Resistancemax

0.45Ohm

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Avalanche Energy Rating Eas

470 mJ

Continuous Drain Current Id

11A

Montaj

Through Hole

Additional Feature

AVALANCHE RATED

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)