Volume pricing
- 1+ pcs$1.42
- 10+ pcs$1.34
- 100+ pcs$1.26
- 500+ pcs$1.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Akım Değeri
- 12.5A
- Input Capacitance Ciss Max Vds
- 2240pF @ 15V
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Yükseklik
- 1.4986mm
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Parça Durumu
- Not For New Designs
- Avalanche Energy Rating Eas
- 400 mJ
- Terminal Pozisyonu
- DUAL
- Transistor Application
- SWITCHING
- Seri
- HEXFET®
- Terminal Sayısı
- 8
- Vgs Max
- ±20V
- Fall Time Typ
- 47 ns
- Rds On Max Id Vgs
- 9m Ω @ 12.5A, 10V
- Power Dissipation
- 2.5W
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 10ns
- Voltage Rated Dc
- 30V
- Continuous Drain Current Id
- 12.5A
- Vgsth Max Id
- 1V @ 250μA
- Yayın Yılı
- 2004
- Threshold Voltage
- 1V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 12.5A Ta
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 78nC @ 10V
- Turn On Delay Time
- 15 ns
- Uzunluk
- 4.9784mm
- Number Of Elements
- 1
- Kurşunsuz
- Contains Lead, Lead Free
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 9mOhm
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