IRLZ24NSTRLPBF

Specifications

Avalanche Energy Rating Eas

68 mJ

Turn On Delay Time

7.1 ns

Vgs Max

±16V

Uzunluk

10.668mm

Terminal Sayısı

2

Recovery Time

90 ns

Power Dissipation Max

3.8W Ta 45W Tc

Pin Sayısı

3

Gate Charge Qg Max Vgs

15nC @ 5V

Gate To Source Voltage Vgs

16V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Reverse Recovery Time

60 ns

Element Configuration

Single

Input Capacitance Ciss Max Vds

480pF @ 25V

Current Continuous Drain Id25

18A Tc

Terminal

SMD/SMT

Rds On Max Id Vgs

60m Ω @ 11A, 10V

Nominal Vgs

2 V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Genişlik

9.65mm

Vgsth Max Id

2V @ 250μA

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material

SILICON

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

72A

Tepe Reflow Sıcaklığı (°C)

260

Yayın Yılı

1996

Case Connection

DRAIN

Direnç

60mOhm

JESD-609 Kodu

e3

Montaj

Surface Mount

Continuous Drain Current Id

18A

Radyasyon Dayanımı

No