IRLU9343PBF

Specifications

Input Capacitance Ciss Max Vds

660pF @ 50V

Yükseklik

6.22mm

Element Configuration

Single

Turn Off Delay Time

21 ns

Rds On Max Id Vgs

105m Ω @ 3.4A, 10V

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

20A Tc

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Parça Durumu

Not For New Designs

Power Dissipation

79W

Min. Çalışma Sıcaklığı

-40°C

Akım Değeri

-20A

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgsth Max Id

1V @ 250μA

Genişlik

2.3876mm

JESD-609 Kodu

e3

Case Connection

DRAIN

Yayın Yılı

2004

Transistor Application

AMPLIFIER

Turn On Delay Time

9.5 ns

Pulsed Drain Currentmax Idm

60A

Tepe Reflow Sıcaklığı (°C)

260

Max Power Dissipation

79W

Montaj

Through Hole

Fabrika Tedarik Süresi

11 Weeks

Fet Type

P-Channel

Gate Charge Qg Max Vgs

47nC @ 10V

Gate To Source Voltage Vgs

20V

Voltage Rated Dc

-55V

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

9.5 ns