Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 19 ns
- Ambalaj
- Tube
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Voltage Rated Dc
- 30V
- Rise Time
- 42ns
- Radyasyon Dayanımı
- No
- Continuous Drain Current Id
- 161A
- Montaj
- Through Hole
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN
- Threshold Voltage
- 2.3V
- Yayın Yılı
- 2008
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pulsed Drain Currentmax Idm
- 620A
- Transistor Application
- SWITCHING
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Akım Değeri
- 161A
- Power Dissipation
- 140W
- Number Of Elements
- 1
- Turn Off Delay Time
- 34 ns
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 30V
- Yükseklik
- 6.22mm
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 50nC @ 4.5V
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Power Dissipation Max
- 140W Tc
- Terminal Sayısı
- 3
- Uzunluk
- 6.7056mm
- Vgs Max
- ±20V
- Turn On Delay Time
- 25 ns
- Avalanche Energy Rating Eas
- 1440 mJ
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
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