IRLU3636PBF

Specifications

Parça Durumu

Active

Transistor Element Material

SILICON

Power Dissipation

143W

Vgsth Max Id

2.5V @ 100μA

Genişlik

2.3876mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Seri

HEXFET®

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Breakdown Voltage

60V

Current Continuous Drain Id25

50A Tc

Rds On Max Id Vgs

6.8m Ω @ 50A, 10V

Turn Off Delay Time

43 ns

Nominal Vgs

2.5 V

Yükseklik

6.223mm

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

3779pF @ 50V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

96 ns

Ambalaj

Tube

Pin Sayısı

3

Gate Charge Qg Max Vgs

49nC @ 4.5V

Gate To Source Voltage Vgs

16V

Power Dissipation Max

143W Tc

Radyasyon Dayanımı

No

Rise Time

216ns

Uzunluk

6.7056mm

Vgs Max

±16V

Continuous Drain Current Id

99A

Terminal Sayısı

3

Montaj

Through Hole

Yayın Yılı

2009