IRLU3410PBF

Specifications

Turn On Delay Time

7.2 ns

Avalanche Energy Rating Eas

150 mJ

Gate Charge Qg Max Vgs

34nC @ 5V

Gate To Source Voltage Vgs

16V

Pin Sayısı

3

Terminal Sayısı

3

Uzunluk

6.7056mm

Vgs Max

±16V

Power Dissipation Max

79W Tc

Input Capacitance Ciss Max Vds

800pF @ 25V

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

105m Ω @ 10A, 10V

Nominal Vgs

2 V

Current Continuous Drain Id25

17A Tc

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgsth Max Id

2V @ 250μA

Genişlik

2.3876mm

JESD-609 Kodu

e3

Direnç

105mOhm

Case Connection

DRAIN

Yayın Yılı

2004

Threshold Voltage

2V

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

60A

Transistor Application

SWITCHING

Montaj

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Voltage Rated Dc

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

26 ns

Ambalaj

Tube