Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Dual Supply Voltage
- 30V
- Power Dissipation
- 69W
- Akım Değeri
- 55A
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- RoHS Durumu
- RoHS Compliant
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Yükseklik
- 6.22mm
- Turn Off Delay Time
- 20 ns
- Drain To Source Breakdown Voltage
- 30V
- Kurşunsuz
- Lead Free
- Continuous Drain Current Id
- 55A
- Radyasyon Dayanımı
- No
- Rise Time
- 210ns
- Voltage Rated Dc
- 30V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Ambalaj
- Tube
- Fall Time Typ
- 54 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drain Currentmax Abs Id
- 20A
- Fet Type
- N-Channel
- Contact Plating
- Tin
- Direnç
- 19mOhm
- Case Connection
- DRAIN
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pulsed Drain Currentmax Idm
- 220A
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2004
- Threshold Voltage
- 1V
- Montaj
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- 30
- Seri
- HEXFET®
- Genişlik
- 2.3876mm
- Vgsth Max Id
- 1V @ 250μA
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
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