IRLU2905ZPBF

Specifications

Turn On Delay Time

14 ns

Avalanche Energy Rating Eas

85 mJ

Pin Sayısı

3

Gate Charge Qg Max Vgs

35nC @ 5V

Gate To Source Voltage Vgs

16V

Power Dissipation Max

110W Tc

Uzunluk

6.7056mm

Vgs Max

±16V

Terminal Sayısı

3

Terminal

Through Hole

Current Continuous Drain Id25

42A Tc

Rds On Max Id Vgs

13.5m Ω @ 36A, 10V

Element Configuration

Single

Input Capacitance Ciss Max Vds

1570pF @ 25V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Reverse Recovery Time

22 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Vgsth Max Id

3V @ 250μA

Genişlik

2.3876mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Montaj

Through Hole

Yayın Yılı

2006

Threshold Voltage

1V

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

240A

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Case Connection

DRAIN

Fet Type

N-Channel

Fabrika Tedarik Süresi

15 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

33 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Voltage Rated Dc

55V