IRLS3036TRLPBF

Specifications

Avalanche Energy Rating Eas

290 mJ

Turn On Delay Time

66 ns

Terminal Sayısı

2

Uzunluk

10.668mm

Vgs Max

±16V

Power Dissipation Max

380W Tc

Gate Charge Qg Max Vgs

140nC @ 4.5V

Gate To Source Voltage Vgs

16V

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

11210pF @ 50V

Element Configuration

Single

Rds On Max Id Vgs

2.4m Ω @ 165A, 10V

Nominal Vgs

2.5 V

Current Continuous Drain Id25

195A Tc

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Vgsth Max Id

2.5V @ 250μA

Genişlik

9.652mm

Parça Durumu

Active

Transistor Element Material

SILICON

Jesd30 Code

R-PSSO-G2

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Contact Plating

Tin

JESD-609 Kodu

e3

Case Connection

DRAIN

Direnç

1.9MOhm

Threshold Voltage

2.5V

Yayın Yılı

2005

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Continuous Drain Current Id

270A

Radyasyon Dayanımı

No

Rise Time

220ns

Fall Time Typ

110 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)