IRLR8721TRPBF

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

6.5 ns

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Rise Time

30ns

Radyasyon Dayanımı

No

Continuous Drain Current Id

65A

Montaj

Surface Mount

Yayın Yılı

2009

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

260A

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Case Connection

DRAIN

Direnç

8.4MOhm

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation

65W

Number Of Elements

1

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

30V

Turn Off Delay Time

9.4 ns

Yükseklik

2.3876mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Gate Charge Qg Max Vgs

13nC @ 4.5V

Gate To Source Voltage Vgs

20V

Power Dissipation Max

65W Tc

Uzunluk

6.7056mm

Vgs Max

±20V

Terminal Sayısı

2

Turn On Delay Time

8.8 ns

Jesd30 Code

R-PSSO-G2

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgsth Max Id

2.35V @ 25μA