IRLR8256TRPBF

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

8.5 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0057Ohm

Rise Time

46ns

Radyasyon Dayanımı

No

Continuous Drain Current Id

81A

Montaj

Surface Mount

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

Yayın Yılı

2007

Case Connection

DRAIN

JESD-609 Kodu

e3

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation

63W

Number Of Elements

1

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

25V

Turn Off Delay Time

12 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yükseklik

2.3876mm

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

15nC @ 4.5V

Power Dissipation Max

63W Tc

Vgs Max

±20V

Uzunluk

6.7056mm

Terminal Sayısı

2

Turn On Delay Time

9.7 ns

Avalanche Energy Rating Eas

86 mJ

Jesd30 Code

R-PSSO-G2

Parça Durumu

Active

Transistor Element Material

SILICON

Genişlik

6.22mm

Jedec95 Code

TO-252AA