IRLR3717PBF

Specifications

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

31nC @ 4.5V

Pin Sayısı

3

Power Dissipation Max

89W Tc

Recovery Time

33 ns

Terminal Sayısı

2

Uzunluk

6.7056mm

Vgs Max

±20V

Turn On Delay Time

14 ns

Avalanche Energy Rating Eas

460 mJ

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgsth Max Id

2.45V @ 250μA

Jedec95 Code

TO-252AA

Genişlik

6.22mm

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Rds On Max Id Vgs

4m Ω @ 15A, 10V

Current Continuous Drain Id25

120A Tc

Input Capacitance Ciss Max Vds

2830pF @ 10V

Element Configuration

Single

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

16 ns

Ambalaj

Tube

Çalışma Sıcaklığı

-55°C~175°C TJ

Voltage Rated Dc

20V

Rise Time

14ns

Radyasyon Dayanımı

No

Continuous Drain Current Id

120A

Montaj

Surface Mount

JESD-609 Kodu

e3

Case Connection

DRAIN

Direnç

4MOhm

Threshold Voltage

2V

Yayın Yılı

2004