IRLR3110ZTRPBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

48 ns

Continuous Drain Current Id

42A

Rise Time

110ns

Radyasyon Dayanımı

No

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

250A

Transistor Application

SWITCHING

Yayın Yılı

2009

Case Connection

DRAIN

Direnç

14MOhm

JESD-609 Kodu

e3

Montaj

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Power Dissipation

140W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE

Number Of Elements

1

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yükseklik

2.52mm

Drain To Source Breakdown Voltage

100V

Kurşunsuz

Lead Free

Turn Off Delay Time

33 ns

Max Junction Temperature Tj

175°C

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Gate To Source Voltage Vgs

16V

Gate Charge Qg Max Vgs

48nC @ 4.5V

Vgs Max

±16V

Uzunluk

6.7056mm

Terminal Sayısı

2

Power Dissipation Max

140W Tc

Turn On Delay Time

24 ns

Transistor Element Material

SILICON

Number Of Channels

1