IRLR024NTRPBF

Specifications

Avalanche Energy Rating Eas

68 mJ

Turn On Delay Time

7.1 ns

Power Dissipation Max

45W Tc

Vgs Max

±16V

Uzunluk

6.7056mm

Terminal Sayısı

2

Recovery Time

90 ns

Pin Sayısı

3

Gate To Source Voltage Vgs

16V

Gate Charge Qg Max Vgs

15nC @ 5V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

17A Tc

Terminal

SMD/SMT

Nominal Vgs

2 V

Rds On Max Id Vgs

65m Ω @ 10A, 10V

Element Configuration

Single

Input Capacitance Ciss Max Vds

480pF @ 25V

Jedec95 Code

TO-252AA

Genişlik

6.22mm

Vgsth Max Id

2V @ 250μA

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Parça Durumu

Active

Number Of Channels

1

Contact Plating

Tin

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Montaj

Surface Mount

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

72A

Tepe Reflow Sıcaklığı (°C)

260

Threshold Voltage

2V

Yayın Yılı

2004

Direnç

80mOhm

Case Connection

DRAIN

JESD-609 Kodu

e3