IRLMS6702TRPBF

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

18 ns

Ambalaj

Tape & Reel (TR)

Voltage Rated Dc

-20V

Rise Time

20ns

Radyasyon Dayanımı

No

Continuous Drain Current Id

-2.4A

Montaj

Surface Mount

Yayın Yılı

1997

Threshold Voltage

-700mV

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Direnç

200mOhm

Fet Type

P-Channel

Fabrika Tedarik Süresi

12 Weeks

Akım Değeri

-2.3A

Power Dissipation

1.7W

Number Of Elements

1

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

-20V

Turn Off Delay Time

21 ns

Yükseklik

1.4478mm

Drive Voltage Max Rds On Min Rds On

2.7V 4.5V

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

6

Gate To Source Voltage Vgs

12V

Gate Charge Qg Max Vgs

8.8nC @ 4.5V

Power Dissipation Max

1.7W Ta

Drain To Source Voltage Vdss

20V

Uzunluk

2.9972mm

Vgs Max

±12V

Terminal Sayısı

6

Turn On Delay Time

13 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgsth Max Id

700mV @ 250μA