IRLMS1902TRPBF

Specifications

Transistor Element Material

SILICON

Parça Durumu

Active

Jesd30 Code

R-PDSO-G6

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn)

Vgsth Max Id

700mV @ 250μA

Genişlik

1.75mm

Input Capacitance Ciss Max Vds

300pF @ 15V

Element Configuration

Single

Terminal Pozisyonu

DUAL

Nominal Vgs

700 mV

Rds On Max Id Vgs

100m Ω @ 2.2A, 4.5V

Current Continuous Drain Id25

3.2A Ta

Kılıf / Paket

SOT-23-6

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

7nC @ 4.5V

Gate To Source Voltage Vgs

12V

Pin Sayısı

3

Terminal Sayısı

6

Uzunluk

2.9972mm

Vgs Max

±12V

Power Dissipation Max

1.7W Ta

Turn On Delay Time

7 ns

Additional Feature

HIGH RELIABILITY

Power Dissipation

1.7W

Akım Değeri

3.2A

Terminal Formu

GULL WING

Number Of Elements

1

Yükseklik

1.143mm

Drive Voltage Max Rds On Min Rds On

2.7V 4.5V

Turn Off Delay Time

12 ns

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

20V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

20V

Fall Time Typ

4 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)