IRLMS1902TR

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Seri

HEXFET®

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn)

Vgsth Max Id

700mV @ 250μA

Additional Feature

HIGH RELIABILITY

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G6

Kılıf / Paket

SOT-23-6

Ds Breakdown Voltagemin

20V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

Non-RoHS Compliant

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

300pF @ 15V

Drive Voltage Max Rds On Min Rds On

2.7V 4.5V

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

100m Ω @ 2.2A, 4.5V

Current Continuous Drain Id25

3.2A Ta

Terminal Sayısı

6

Vgs Max

±12V

Power Dissipation Max

1.7W Ta

Drain To Source Voltage Vdss

20V

Gate Charge Qg Max Vgs

7nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.1Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Drain Currentmax Abs Id

3.2A

JESD-609 Kodu

e3

Yayın Yılı

2004

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

18A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES