IRLML6402GTRPBF

Specifications

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Number Of Channels

1

Vgsth Max Id

1.2V @ 250μA

Genişlik

1.397mm

Terminal Kaplaması

Matte Tin (Sn)

Seri

HEXFET®

Current Continuous Drain Id25

3.7A Ta

Rds On Max Id Vgs

65m Ω @ 3.7A, 4.5V

Element Configuration

Single

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

633pF @ 10V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Pin Sayısı

3

Gate Charge Qg Max Vgs

12nC @ 5V

Gate To Source Voltage Vgs

12V

Power Dissipation Max

1.3W Ta

Drain To Source Voltage Vdss

20V

Uzunluk

3.0226mm

Vgs Max

±12V

Terminal Sayısı

3

Turn On Delay Time

350 ns

Power Dissipation

1.3W

Additional Feature

HIGH RELIABILITY

Manufacturer Package Identifier

IRLML6402GTRPBF

Number Of Elements

1

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

-20V

Turn Off Delay Time

588 ns

Yükseklik

1.12mm

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

RoHS Durumu

ROHS3 Compliant

Max Junction Temperature Tj

150°C

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

381 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)