Volume pricing
- 1+ pcs$1.67
- 10+ pcs$1.58
- 100+ pcs$1.49
- 500+ pcs$1.40
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 540mW Ta
- Terminal Sayısı
- 3
- Uzunluk
- 3.0226mm
- Vgs Max
- ±12V
- Qualification Status
- Not Qualified
- Gate To Source Voltage Vgs
- 12V
- Gate Charge Qg Max Vgs
- 3.9nC @ 4.5V
- Pin Sayısı
- 3
- Turn On Delay Time
- 2.5 ns
- Min Breakdown Voltage
- 20V
- Vgsth Max Id
- 700mV @ 250μA
- Genişlik
- 3.05mm
- Tepe Reflow Süresi (maks. sn)
- 30
- Seri
- HEXFET®
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Rds On Max Id Vgs
- 250m Ω @ 930mA, 4.5V
- Nominal Vgs
- 700 mV
- Terminal
- SMD/SMT
- Current Continuous Drain Id25
- 1.2A Ta
- Input Capacitance Ciss Max Vds
- 110pF @ 15V
- Terminal Pozisyonu
- DUAL
- Element Configuration
- Single
- Rise Time
- 9.5ns
- Continuous Drain Current Id
- 1.2A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 4.8 ns
- Ambalaj
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Voltage Rated Dc
- 20V
- Fet Type
- N-Channel
- Contact Plating
- Tin
- Fabrika Tedarik Süresi
- 12 Weeks
- Montaj
- Surface Mount
- JESD-609 Kodu
- e3
- Direnç
- 250mOhm
- Threshold Voltage
- 700mV
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