IRLML2030TRPBF

Specifications

Drain Currentmax Abs Id

2.2A

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Continuous Drain Current Id

2.7A

Uzunluk

3.0226mm

Terminal Sayısı

3

Turn Off Delay Time

4.5 ns

Rds On Max Id Vgs

100m Ω @ 2.7A, 10V

Nominal Vgs

1.7 V

Drain To Source Breakdown Voltage

30V

ECCN Kodu

EAR99

Threshold Voltage

1.7V

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pin Sayısı

3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Kurşunsuz

Lead Free

Vgs Max

±20V

Recovery Time

14 ns

Turn On Delay Time

4.1 ns

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

1.3W Ta

Montaj

Surface Mount

Parça Durumu

Active

Current Continuous Drain Id25

2.7A Ta

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

1nC @ 4.5V

Element Configuration

Single

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn)

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

110pF @ 15V

Fet Type

N-Channel

Genişlik

1.397mm

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V