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IRLML0100TRPBF

Infineon Technologies

IRLML0100TRPBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Current Continuous Drain Id25
1.6A Ta
Ambalaj
Tape & Reel (TR)
Operating Mode
ENHANCEMENT MODE
Gate Charge Qg Max Vgs
2.5nC @ 4.5V
Element Configuration
Single
Terminal Kaplaması
Matte Tin (Sn)
Reach Svhc
No SVHC
Input Capacitance Ciss Max Vds
290pF @ 25V
Max Junction Temperature Tj
150°C
Fet Type
N-Channel
Genişlik
1.397mm
Tepe Reflow Sıcaklığı (°C)
260
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Çalışma Sıcaklığı
-55°C~150°C TJ
Gate To Source Voltage Vgs
16V
Fall Time Typ
3.6 ns
Number Of Elements
1
Fabrika Tedarik Süresi
12 Weeks
RoHS Durumu
ROHS3 Compliant
Yükseklik
1.12mm
Rise Time
2.1ns
Montaj Tipi
Surface Mount
Power Dissipation
1.3W
Direnç
220MOhm
Yayın Yılı
1997
Tepe Reflow Süresi (maks. sn)
30
Qualification Status
Not Qualified
Vgsth Max Id
2.5V @ 25μA
Pulsed Drain Currentmax Idm
7A
Terminal Pozisyonu
DUAL
JESD-609 Kodu
e3
Number Of Channels
1
Transistor Element Material
SILICON
Continuous Drain Current Id
1.6A
Terminal Sayısı
3
Uzunluk
3.0226mm
Rds On Max Id Vgs
220m Ω @ 1.6A, 10V
Turn Off Delay Time
9 ns
Nominal Vgs
2.5 V
Drain To Source Breakdown Voltage
100V

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