IRLML0060TRPBF

Specifications

Direnç

92MOhm

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

2.5V @ 25μA

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Yükseklik

1.12mm

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Rise Time

6.3ns

Power Dissipation

1.25W

Input Capacitance Ciss Max Vds

290pF @ 25V

Reach Svhc

No SVHC

Max Junction Temperature Tj

150°C

Fet Type

N-Channel

Fall Time Typ

4.2 ns

Genişlik

1.397mm

Tepe Reflow Sıcaklığı (°C)

260

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

16V

Current Continuous Drain Id25

2.7A Ta

Gate Charge Qg Max Vgs

2.5nC @ 4.5V

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

Turn On Delay Time

5.4 ns

Recovery Time

21 ns

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Montaj

Surface Mount

Power Dissipation Max

1.25W Ta

Pin Sayısı

3

Vgs Max

±16V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Kurşunsuz

Lead Free

Transistor Element Material

SILICON