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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 1W Ta
- Montaj
- Surface Mount
- Akım Değeri
- 3.9A
- Parça Durumu
- Not For New Designs
- Turn On Delay Time
- 7.4 ns
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- TO-261-4, TO-261AA
- Kurşunsuz
- Contains Lead
- Vgs Max
- ±16V
- Additional Feature
- HIGH RELIABILITY, AVALANCHE RATED
- Pin Sayısı
- 3
- Drain To Source Breakdown Voltage
- 30V
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 3.9A
- Terminal Sayısı
- 4
- Uzunluk
- 6.6802mm
- Rds On Max Id Vgs
- 45m Ω @ 3.9A, 10V
- Turn Off Delay Time
- 6.9 ns
- Terminal Pozisyonu
- DUAL
- JESD-609 Kodu
- e3
- Jesd30 Code
- R-PDSO-G4
- Pulsed Drain Currentmax Idm
- 16A
- Vgsth Max Id
- 2.4V @ 250μA
- Direnç
- 60mOhm
- Yayın Yılı
- 1999
- Tepe Reflow Süresi (maks. sn)
- 30
- Rise Time
- 24ns
- Case Connection
- DRAIN
- Montaj Tipi
- Surface Mount
- Avalanche Energy Rating Eas
- 180 mJ
- Power Dissipation
- 2.1W
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 14 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 1.4478mm
- Fet Type
- N-Channel
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