IRLL024NTRPBF

Specifications

Fet Type

N-Channel

Fall Time Typ

25 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4V 10V

Gate To Source Voltage Vgs

16V

Genişlik

3.7mm

Input Capacitance Ciss Max Vds

510pF @ 25V

Reach Svhc

No SVHC

Max Junction Temperature Tj

150°C

Radyasyon Dayanımı

No

Voltage Rated Dc

55V

Current Continuous Drain Id25

3.1A Ta

Element Configuration

Single

Gate Charge Qg Max Vgs

15.6nC @ 5V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-G4

Vgsth Max Id

2V @ 250μA

Direnç

65mOhm

Yayın Yılı

1999

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Rise Time

21ns

Power Dissipation

2.1W

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yükseklik

1.8mm

Dual Supply Voltage

55V

Drain To Source Breakdown Voltage

55V

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Threshold Voltage

2V

Transistor Application

SWITCHING

Continuous Drain Current Id

3.1A

Transistor Element Material

SILICON

Nominal Vgs

2 V

Turn Off Delay Time

18 ns

Rds On Max Id Vgs

65m Ω @ 3.1A, 10V

Uzunluk

6.6802mm