IRLL014NTRPBF

Specifications

Gate Charge Qg Max Vgs

14nC @ 10V

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Voltage Rated Dc

55V

Current Continuous Drain Id25

2A Ta

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

230pF @ 25V

Reach Svhc

No SVHC

Fall Time Typ

2.9 ns

Genişlik

3.7mm

Gate To Source Voltage Vgs

16V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4V 10V

Fet Type

N-Channel

Dual Supply Voltage

55V

Yükseklik

1.4478mm

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Power Dissipation

2.1W

Montaj Tipi

Surface Mount

Rise Time

4.9ns

Case Connection

DRAIN

Yayın Yılı

1999

Direnç

200mOhm

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-G4

Drain Currentmax Abs Id

2A

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Nominal Vgs

2 V

Uzunluk

6.6802mm

Terminal Sayısı

4

Turn Off Delay Time

14 ns

Rds On Max Id Vgs

140m Ω @ 2A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

2A

Terminal Formu

GULL WING

Transistor Application

SWITCHING