IRLI530NPBF

Specifications

Transistor Element Material

SILICON

Continuous Drain Current Id

12A

Nominal Vgs

2 V

Uzunluk

10.6172mm

Terminal Sayısı

3

Turn Off Delay Time

30 ns

Rds On Max Id Vgs

100m Ω @ 9A, 10V

Drain To Source Breakdown Voltage

100V

ECCN Kodu

EAR99

Threshold Voltage

2V

Transistor Application

SWITCHING

Turn On Delay Time

7.2 ns

Recovery Time

210 ns

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Not For New Designs

Akım Değeri

11A

Montaj

Through Hole

Power Dissipation Max

41W Tc

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Contact Plating

Tin

Pin Sayısı

3

Vgs Max

±16V

Kılıf / Paket

TO-220-3 Full Pack

Kurşunsuz

Contains Lead, Lead Free

Isolation Voltage

2kV

Input Capacitance Ciss Max Vds

800pF @ 25V

Reach Svhc

No SVHC

Fet Type

N-Channel

Fall Time Typ

26 ns

Genişlik

4.826mm

Drive Voltage Max Rds On Min Rds On

4V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

16V

Voltage Rated Dc

100V

Current Continuous Drain Id25

12A Tc

Gate Charge Qg Max Vgs

34nC @ 5V

Element Configuration

Single

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE